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  Datasheet File OCR Text:
 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT 23
MMBTA13 14
FEATURES
1. BASE
TRANSISTOR NPN(c)
2. EMITTER 3. COLLECTOR
Power dissipation PCM : 0.3W Tamb=25ae(c) Collector current ICM: 0.3A Collector-base voltage V(BR)CBO : 30V Operating and storage junction temperature range T J T stg: -55aeto +150 ELECTRICAL CHARACTERISTICS Tamb=25ae
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) * DC current gain hFE(2) * Collector-emitter saturation voltage Base-emitter voltage Transition frequency VCE (sat) * VBE * VCE=5 V, IC= 100mA
Unit : mm
unless
Test
otherwise
specified(c)
MIN 30 30 10 0.1 0.1 MAX UNIT V V V |I A |I A
conditions
Ic= 100|I A IE=0 Ic= 100uAIB=0 IE= 100|I AIc=0 VCB=30 V , IE=0 VEB= 10V , IC=0 MMBTA13 MMBTA14 MMBTA13 MMBTA14 IC=100 mA, IB=0.1mA VCE=5V,IC= 100mA VCE=5V, I = 10mA C
VCE=5V, IC= 10m A
5000 10000 10000 20000 1.5 2.0 125 V V MHz
fT
f=100MHz
* Pulse Test : pulse widthU 300|I duty cycle U s 2% Marking : MMBTA13:1M MMBTA14 1N
SOT-23 PACKAGE OUTLINE DIMENSIONS
D b
|E
0.2
E1
E
L1 e e1 C A1 A2 Symbol A A1 A2 b c D E E1 e e1 L L1 |E 0.300 0 1.800 0.550REF 0.500 8 0.012 0 Dimensions In Millimeters Min 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 0.950TPY 2.000 0.071 0.022REF 0.020 8 Max 1.100 0.100 1.000 0.500 0.150 3.000 1.400 2.550 Min 0.035 0.000 0.035 0.012 0.003 0.110 0.047 0.089 0.037TPY 0.079 A L Dimensions In Inches Max 0.043 0.004 0.039 0.020 0.006 0.118 0.055 0.100


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